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2SC4214

Toshiba Semiconductor

Silicon NPN Planar Typpe Transistor

TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 2SC4214 UHF TV Tuner RF Amplifier Applications Unit: mm • Low noi...


Toshiba Semiconductor

2SC4214

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Description
TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 2SC4214 UHF TV Tuner RF Amplifier Applications Unit: mm Low noise figure: NF = 2.8dB (typ.) High power gain VCC = 4.5 V: Gpb = 15dB (typ.) Excellent forward AGC characteristics Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 2 V Base current IB 4 mA Collector current IC 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC JEITA ― ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3J1B Weight: 0.013 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition frequency Reverse transfer capacitance Power gain Noise figure AGC voltage ...




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