2SC4225

DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band. It has large dynamic range and good current characteristics. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 ± 0.1 FEATURES 2.0 ± 0.2 0.3 +0.1 –0 Low Noise and High Gain NF = 1.5 dB TYP. S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz at VCE = 10 V, IC = 20 mA, f = 1 GHz (reference value) 0.65 0.65 2 0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCB0 VCE0 VEB0 IC PT Tj Tstg 25 12 3.0 70 160 150 –65 to +150 V V V mA mW ˚ C ˚ C 0.9 ± 0.1 Marking ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Characteristics Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Symbol ICB0 IEB0 hFE fT Cob S21e 2 NF 7.5 40 80 4 1.2 9.0 1.5 3.0 1.8 MIN. TYP. MAX. 1.0 1.0 200 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Unit Test Conditions VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 VCE = 3 V, IC = 20 mA, pulsed µA µA GHz pF dB dB VCE = 3 V, IC = 20 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 20 mA, f = 1 GHz VCE = 3 V, IC = 5 mA, f = 1GHz hFE Classifications Rank Marking hFE R2 R2 40 to...