SiHD3N50D

www.vishay.com SiHD3N50D Vishay Siliconix D Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 3.2 12 2 3 Single FEATURES Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) Available Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Consumer electronics - Displays (LCD or plasma TV) Server and telecom power supplies - SMPS Industrial - Welding - Induction heating - Motor drives Battery chargers ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free DPAK (TO-252) SiHD3N50D-GE3 SiHD3N50DT5-GE3 SiHD3N50D-E3 DPAK (TO-252) SiHD3N50DT1-GE3 SiHD3N50D-BE3 - DPAK (TO-252) SiHD3N50DT4-GE3 - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage Gate-source voltage AC (f > 1 Hz) VGS Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature ...