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NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD4123DT、3DD4123DM
IC VCEO PC(D4123DT) PC(D4123DM)
MAIN...
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NPN MIDDLING VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
3DD4123DT、3DD4123DM
IC VCEO PC(D4123DT) PC(D4123DM)
MAIN CHARACTERISTICS
2.0A 200V 1W 20W
Package
z z z z
APPLICATIONS
z Energy-saving ligh z Electronic ballasts z Electronic transformer z Commonly
power
amplifier
circuit
D4123DT
z z z z z （RoHS）
D4123DM
FEATURES
z Middling
breakdown
voltage z High current capability z High switching speed z High reliability z RoHS product
www.DataSheet.co.kr
ORDER MESSAGE
Order codes 3DD4123DT-O-T-N-C 3DD4123DM-O-M-N-C Halogen Free NO NO TO-92 TO-126 Marking 4123DT 4123DM Package Packaging Bag Bag
：200910C
1/6
Datasheet pdf - http://www.DataSheet4U.net/
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3DD4123DT、3DD4123DM
ABSOLUTE RATINGS (Tc=25℃)
Parameter Symbol VCEO VEBO IC ICP IB IBP PC PC Tj Tstg Value 350 200 7 2 4 1 2 1 20 150 -55~+150 Unit V V V A A A A W W ℃ ℃
— — —
Collector- Emitter Voltage（VBE=0） VCES Collector- Emitter Voltage（IB=0） Emitter-Base Voltage Collector Current（DC） Collector Current（pulse） Base Current（DC） Base Current（pulse） Total Dissipation (TO-D4123DT) Total Dissipation (TO-D4123DM) Junction Temperature Storage Temperature
：pulse5ms。
Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
ElECTRICAL CHARACTERISTIC
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Hfe(1) Hfe(2) VCE(sat)(1) VCE(sat)(2) VBE(sat) tf ts fT
Parameter
Tests conditions IC=10mA,IB=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=350V, IE=0 VCE=200V,IB=0 VEB=7V, IC=0 VCE =5V, VCE =5V,...
