DMZ6005

DMZ6005 Depletion-Mode Power MOSFET General Features       Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available BVDSX 600V RDS(ON) (Max.) 700 Ω IDSS,min 5mA Applications       Normally-on Switches SMPS Start-up Circuit Linear Amplifier Converters Constant Current Source Telecom Ordering Information Part Number DMZ6005 Package SOT-23 Marking 605 Remark Halogen Free Absolute Maximum Ratings Symbol VDSX VDGX ID IDM PD VGS TL TJ and TSTG Parameter Drain-to-Source Voltage[1] Drain-to-Gate Voltage [1] www.DataSheet.co.kr TA=25℃ unless otherwise specified DMZ6005 600 600 0.02 0.08 0.50 ± 20 300 -55 to 150 Unit V V A W V ℃ Continuous Drain Current Pulsed Drain Current Power Dissipation Gate-to-Source Voltage Soldering Temperature Distance of 1.6mm from case for 10 seconds Operating and Storage Temperature Range Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient DMZ6005 250 Unit K/W ARK Microelectronics Co., Ltd. www.ark-micro.com 1/6 Rev. 2.1 Dec. 2011 Datasheet pdf - http://www.DataSheet4U.net/ DMZ6005 Electrical Characteristics OFF Characteristics Symbol BVDSX ID(OFF) Parameter Drain-to-Source Breakdown Voltage Min. 600 -Drain-to-Source Leakage Current -Gate-to-Source Leakage Current ---...