KF5N50FSA

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC trr(typ) = 150ns (KF5N50FSA) trr(typ) = 300ns (KF5N50FZA) @VGS = 10V KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD RATING 500 30 5.0* 2.9* 13* 270 www.DataSheet.co.kr UNIT V V A mJ mJ V/ns W W/ 8.6 20 37.9 0.30 150 -55 150 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 3.3 62.5 /W /W * : Drain current limited by maximum junction temperature. PIN CONNECTION 2010. 8. 25 Revision No : 0 1/6 Datasheet pdf - http://www.DataSheet4U.net/ KF5N50FZA/FSA ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Dr...