AM110N06-08P

Analog Power AM110N06-08P N-Channel 60-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 8 @ VGS = 10V 13 @ VGS = 4.5V VDS (V) 60 ID(A) 110a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 TA=25°C ID 110 Continuous Drain Current a IDM Pulsed Drain Current b 390 a IS 110 Continuous Source Current (Diode Conduction) a T =25°C P 300 Power Dissipation A D TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol Maximum RθJA 62.5 RθJC 0.5 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM110N06-08P_1A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Cap...