AM1922NE

Analog Power N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe S1 SC70-6 saves board space G1 Fast switching speed D2 High performance trench technology AM1922NE PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 88 @ VGS = 4.5V 20 120 @ VGS = 2.5V D1 G1 G2 ID (A) 1.6 1.3 D2 SC70-6 Top View 1 2 3 6 5 4 D1 G2 S2 S1 S2 N-Channel MOSFET N-Channel MOSFET ESD Protected 2000V ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) o Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a www.DataSheet.co.kr Symbol Maximum Units VDS 20 V VGS 8 o o TA=25 C TA=70 C ID IDM 1.6 1.3 5 0.4 0.3 0.21 o A A W Continuous Source Current (Diode Conduction) Power Dissipation a a o o IS PD TA=25 C TA=70 C C Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t <= 5 sec Steady-State RTHJA 415 460 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINAR...