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AM2301PE Dataheets PDF



Part Number AM2301PE
Manufacturers Analog Power
Logo Analog Power
Description P-Channel 20-V (D-S) MOSFET
Datasheet AM2301PE DatasheetAM2301PE Datasheet (PDF)

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 s.

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Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AM2301PE PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.130 @ VGS = -4.5V -20 0.190 @ VGS = -2.5V G ID (A) -2.6 -2.1 ESD Protected S D ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS -20 Drain-Source Voltage V VGS ±8 Gate-Source Voltage www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -2.6 -1.5 -10 ±1.6 1.25 0.8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maximum Units RΤΗJA 100 166 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2301PE_A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM2301PE SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Paramete r Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A o Symbol VGS(th) IGSS IDSS ID(on) A Te st Conditions VDS = VGS, ID = -250 uA VDS = 0 V, VGS = +/-8 V Min -0.4 Limits Unit Typ Max -1 ±10 µA µA A VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, T J = 55 C o -1 -10 -3 0.130 0.190 3 -0.70 3 0.6 0.9 9 10 30 10 Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage A rDS(on) g fs VSD Qg Qgs Qgd td(on) tr td(off) tf VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1 A VGS = -2.5 V, ID = -1 A VDS = -5 V, ID = -1 A IS = -1 A, VGS = 0 V Ω S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VDS = -5 V, VGS = -4.5 V, ID = -1 A nC VDD = -5 V, RL = 5 OHM, VGEN = -4.5 V, RG = 6 OHM www.DataSheet.co.kr ns Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incide.


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