Document
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology
AM2301PE
PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.130 @ VGS = -4.5V -20 0.190 @ VGS = -2.5V
G
ID (A) -2.6 -2.1
ESD Protected
S
D
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS -20 Drain-Source Voltage V VGS ±8 Gate-Source Voltage
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o
Continuous Drain Current Pulsed Drain Current
b
a
TA=25 C TA=70 C
o
o
ID IDM
-2.6 -1.5 -10 ±1.6 1.25 0.8 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
a
IS TA=25 C TA=70 C
o o
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta t <= 5 sec Steady-State
Symbol Maximum Units
RΤΗJA 100 166
o
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2301PE_A
Datasheet pdf - http://www.DataSheet4U.net/
Analog Power
AM2301PE
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Paramete r Static
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
A
o
Symbol
VGS(th) IGSS IDSS ID(on)
A
Te st Conditions
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = +/-8 V
Min
-0.4
Limits Unit Typ Max
-1
±10
µA µA A
VDS = -16 V, VGS = 0 V
VDS = -16 V, VGS = 0 V, T J = 55 C
o
-1 -10 -3 0.130 0.190 3 -0.70 3 0.6 0.9 9 10 30 10
Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage
A
rDS(on) g fs VSD Qg Qgs Qgd td(on) tr td(off) tf
VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1 A VGS = -2.5 V, ID = -1 A VDS = -5 V, ID = -1 A IS = -1 A, VGS = 0 V
Ω S V
Dynamic
b
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time
VDS = -5 V, VGS = -4.5 V, ID = -1 A
nC
VDD = -5 V, RL = 5 OHM, VGEN = -4.5 V, RG = 6 OHM
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ns
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incide.