AM2303P

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AM2303P PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.100 @ VGS = -4.5V -20 0.160 @ VGS = -2.5V 0.290 @ VGS = -1.8V ID (A) -2.9 -2.3 -1.7 G D S ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V VGS ±12 Gate-Source Voltage www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -2.9 -2.4 -10 ±1.6 1.25 0.8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maximum Units RΤΗJA 100 166 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2303_B Datasheet pdf - http://www.Dat...