Document
Analog Power N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • •
AM2340NE
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 43 @ VGS = 10V 40 50 @ VGS = 4.5V 55 @ VGS = 3.5V
ID (A) 5.2 4.2 4.0
Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology ESD Protected 2000V
o
G D S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter 40 Drain-Source Voltage VDS V VGS ±20 Gate-Source Voltage
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Continuous Drain Current Pulsed Drain Current
b
a
TA=25 C TA=70 C
a o
o
ID IDM IS
5.2 4.1 30 1.6 1.3 0.8 -55 to 150 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD TJ, Tstg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 5 sec RθJA
Maximum
100 166
Units
o o
Steady-State
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
Publication Order Number: DS-AM2340NE_A
Datasheet pdf - http://www.DataSheet4U.net/
Analog Power
AM2340NE
Param eter Static
G ate-Threshold V oltage G ate-B ody L eakage Zero G ate V oltage D rain C urrent O n-State D rain C urrent
A A
Sym bol
V GS(th) IGSS IDSS ID(on) rDS(on) gfs V SD Q g Q gs Q gd td(on) tr td(off) tf
Test Conditions
V DS = V GS, ID = 250 uA
V ,V DS = 0 V GS = 20 V
Lim its Unit Min Typ Max
1
±10
V uA uA A
,V V DS = 32 V GS = 0 V
V ,V , TJ = 55oC DS = 32 V GS = 0 V
1 25 20 43 50 40 0.7 4.0 1.1 1.4 16 5 23 3
D rain-Source O n-R esistance Forw ard Tranconductance D iode Forw ard V oltage
A
V ,V DS = 5 V GS = 10 V , ID = 5.2 A V GS = 10 V , ID = 4.2 A V GS = 4.5 V V , ID = 5.2 A DS = 15 V IS = 2.3 A, V GS = 0 V
m Ω S V
Dynam ic
b
Total G ate C harge G ate-Source C harge G ate-D rain C harge Turn-O nD elay Tim e R ise Tim e Turn-O ff D elay Tim e Fall-Tim e
,V , V DS = 15 V GS = 4.5 V ID = 5.2 A
nC
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V ,R DD = 25 V L = 25 Ω , ID = 1 A, GEN = 10 V V
nS
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incident.