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AM2340NE Dataheets PDF



Part Number AM2340NE
Manufacturers Analog Power
Logo Analog Power
Description N-Channel 40-V (D-S) MOSFET
Datasheet AM2340NE DatasheetAM2340NE Datasheet (PDF)

Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • AM2340NE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 43 @ VGS = 10V 40 50 @ VGS = 4.5V 55 @ VGS = 3.5V ID (A) 5.2 4..

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Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • AM2340NE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 43 @ VGS = 10V 40 50 @ VGS = 4.5V 55 @ VGS = 3.5V ID (A) 5.2 4.2 4.0 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology ESD Protected 2000V o G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter 40 Drain-Source Voltage VDS V VGS ±20 Gate-Source Voltage www.DataSheet.co.kr Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C a o o ID IDM IS 5.2 4.1 30 1.6 1.3 0.8 -55 to 150 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t <= 5 sec RθJA Maximum 100 166 Units o o Steady-State C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2340NE_A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM2340NE Param eter Static G ate-Threshold V oltage G ate-B ody L eakage Zero G ate V oltage D rain C urrent O n-State D rain C urrent A A Sym bol V GS(th) IGSS IDSS ID(on) rDS(on) gfs V SD Q g Q gs Q gd td(on) tr td(off) tf Test Conditions V DS = V GS, ID = 250 uA V ,V DS = 0 V GS = 20 V Lim its Unit Min Typ Max 1 ±10 V uA uA A ,V V DS = 32 V GS = 0 V V ,V , TJ = 55oC DS = 32 V GS = 0 V 1 25 20 43 50 40 0.7 4.0 1.1 1.4 16 5 23 3 D rain-Source O n-R esistance Forw ard Tranconductance D iode Forw ard V oltage A V ,V DS = 5 V GS = 10 V , ID = 5.2 A V GS = 10 V , ID = 4.2 A V GS = 4.5 V V , ID = 5.2 A DS = 15 V IS = 2.3 A, V GS = 0 V m Ω S V Dynam ic b Total G ate C harge G ate-Source C harge G ate-D rain C harge Turn-O nD elay Tim e R ise Tim e Turn-O ff D elay Tim e Fall-Tim e ,V , V DS = 15 V GS = 4.5 V ID = 5.2 A nC www.DataSheet.co.kr V ,R DD = 25 V L = 25 Ω , ID = 1 A, GEN = 10 V V nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incident.


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