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AM2371P Dataheets PDF



Part Number AM2371P
Manufacturers Analog Power
Logo Analog Power
Description P-Channel 100-V (D-S) MOSFET
Datasheet AM2371P DatasheetAM2371P Datasheet (PDF)

Analog Power AM2371P P-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters PRODUCT SUMMARY rDS(on) (Ω) 1.2 @ VGS = -10V 1.3 @ VGS = -4.5V VDS (V) -100 ID(A) -1 -0.9 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -100 VGS Gate-Source Vo.

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Analog Power AM2371P P-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters PRODUCT SUMMARY rDS(on) (Ω) 1.2 @ VGS = -10V 1.3 @ VGS = -4.5V VDS (V) -100 ID(A) -1 -0.9 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 TA=25°C -1 ID Continuous Drain Current a TA=70°C -0.8 IDM Pulsed Drain Current b -10 a I -1.6 Continuous Source Current (Diode Conduction) S T =25°C 1.3 A PD Power Dissipation a TA=70°C 0.8 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 100 RθJA 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM2371P_2010 Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM2371P Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±20 V VDS = -80 V, VGS = 0 V VDS = -80 V, VGS = 0 V, TJ = 55°C VDS = -10 V, VGS = -10 V VGS = -10 V, ID = -1 A VGS = -4.5 V, ID = -0.9 A VDS = -15 V, ID = -1 A IS = -0.8 A, VGS = 0 V Dynamic VDS = -50 V, VGS = -4.5 V, ID = -1 A Min -1 Typ Max -3.5 ±100 1 25 1.2 1.3 Unit V nA uA A Ω S V -10 5 -0.81 3.7 1.1 1.7 3.5 3.8 15.5 10.3 358 54 29 nC VDD = -50 V, RL = 50 Ω , ID = -1 A, VGEN = -10 V, RGEN = 6 Ω nS VDS = -15 V, VGS = 0 V, f =1 MHz www.DataSheet.co.kr pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application b.


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