AM2392N

Analog Power N-Channel 150V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. AM2392N PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 2.6 @ VGS = 10 V 150 2.8 @ VGS = 5.5V ID (A) 0.6 0.5 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter VDS Drain-Source Voltage 150 V Gate-Source Voltage VGS ±20 www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o TA=25 C ID 0.6 ±10 1.1 1.30 IDM a o A A W o Continuous Source Current (Diode Conduction) IS TA=25 C P D Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RthJA Typ 93 130 Max 110 150 o t <= 10 sec Steady State C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2392_A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM2392N SPECIFICATIONS (TA =...