AM30N20-400PCFM

Analog Power AM30N20-400PCFM N-Channel 200-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters PRODUCT SUMMARY rDS(on) (mΩ) 400 @ VGS = 10V 450 @ VGS = 5.5V VDS (V) 200 ID(A) 9 8.5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 9 a I 50 Pulsed Drain Current DM IS Continuous Source Current (Diode Conduction) 50 T =25°C P Power Dissipation 60 C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol Maximum RθJA 62.5 RθJC 2.5 Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM30N20-400PCFM-1A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM30N20-400PCFM Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th)...