AM3472N

Analog Power N-Channel 100V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. AM3472N PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.170 @ VGS = 10 V 100 0.185 @ VGS = 5.5V TSOP-6 Top View D D G 1 2 3 6 5 4 D D S G1 ID (A) 2.9 2.7 D1 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter VDS Drain-Source Voltage 100 V Gate-Source Voltage VGS ±20 www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o TA=25 C ID 2.9 ±10 1.1 2.0 IDM a o A A W o Continuous Source Current (Diode Conduction) IS TA=25 C P D Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RthJA Typ 93 130 Max 110 150 o t <= 10 sec Steady State C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM3472_A Datasheet pdf - http://ww...