MOSFET
Analog Power P-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power P-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 saves board space Fast switching speed High performance trench technology
AM40P06-135P
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 135 @ VGS = -10V -60 150 @ VGS = -4.5V
ID (A) -39
a
S G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage -60 V ±20 Gate-Source Voltage VGS
www.DataSheet.co.kr
o
Continuous Drain Current Pulsed Drain Current Power Dissipation
a b
a
o TC =25 C ID
-90 -390 -110 300
IDM
a o
A A W
o
Continuous Source Current (Diode Conduction)
IS TC =25 C P D
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
C
T H E RMA L RESIST A NC E RA TING S Param eter Sym bol
M axim umJunction-to-Am bient M axim umJunction-to-Case
a
Maxim u m U nits
62.5 0.5
o o
RθJA RθJC
C/W C/W
Notes a. Package Limited b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
Publication Order Number: DS-AM40P06-135_A
Datasheet pdf - http://www.DataSheet4U.net/
Analog Power
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