AM40P20-150PCFM

Analog Power P-Channel 200-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and cordless telephones. AM40P20-150PCFM PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 150 @ VGS = -10V -200 280 @ VGS = -5.5V ID (A) 37 27 TO-220CFM Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220CFM saves board space Fast switching speed High performance trench technology S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parame ter Symbol Maximum Units Drain-Source Voltage -40 VDS V Gate-Source Voltage VGS ±20 www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o TA=25 C ID 37 ±100 -30 300 IDM a A A W o Continuous Source Current (Diode Conduction) IS o TA=25 C P D Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.0 Units o o RθJA RθJC C/W C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM40P20-150PCFM_A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM40P20-150PCFM ...