Document
2SC4297
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4297 500 400 10 12(Pulse24) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz
(Ta=25°C) 2SC4297 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V V MHz pF Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
16.2
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.7 IB2 (A) –1.4 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
12
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5)
I C – V BE Temperature Characteristics (Typical)
12 (V CE =4V)
1A
10 Collector Current I C (A)
80 0m A
60 0m A
10 1
–55˚C (Case 25˚C (Cas
125˚C
Collector Current I C (A)
V B E (sat)
8
400m A
Temp)
8
p)
6
e Temp)
as e 2 5 Temp ) ˚C
(Cas
4
4
(Ca
200mA
I B =100mA
2
12
5˚
V C E (sat) 0 0.02 0.05 0.1 0.5 1 5
–5
5˚
C
2
0
0
1
2
3
4
10
0
0
0.2
0.4
0.6
0.8
–55˚C
C
25˚C
125
(C
1.0
(Case
˚C
Temp
e Te
se
Te (Case
mp)
Tem
mp)
6
)
Collector-Emitter Voltage V C E (V)
Collector Current I C (A)
Base-Emittor Voltage V B E (V)
(V C E =4V) 50 8
θ j - a (˚ C/W)
h FE – I C Characteristics (Typical)
t on• t s t g • t f ( µ s)
5
t on •t stg • t f – I C Characteristics (Typical)
θ j-a – t Characteristics
2
125˚C
DC Cur rent Gain h F E
Transient Thermal Resistance
t s tg V C C 200V I C :I B1 :–I B 2 =10:1:2 1 0.5 t on
25˚C
–30˚C
1
10
Swi tchi ng T im e
0.5
tf 0.1 0.5 1 Collector Current I C (A) 5 10
5 0.02
0.05
0.1
0.5
1
5
10 12
0.1
1
10 Time t(ms)
100
3.0
1.2
1000
Collector Current I C (A)
Safe Operating Area (Single Pulse)
30
10 0µ s
Reverse Bias Safe Operating Area
30 80
P c – T a Derating
10 Co lle ctor Cu rre nt I C ( A) Collector Curr ent I C (A) 5
10 5
M aximum Power Dissipa ti on P C (W)
60
W ith In fin ite he
40
at si nk
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1%
Without Heatsink Natural Cooling
20
0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V)
0.1 5
10
50
100
500
3.5 0
Without Heatsink 0 50 100 150
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
95
.