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2SC4297 Dataheets PDF



Part Number 2SC4297
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon NPN Transistor
Datasheet 2SC4297 Datasheet2SC4297 Datasheet (PDF)

2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4297 500 400 10 12(Pulse24) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions V.

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2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4297 500 400 10 12(Pulse24) 4 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) 2SC4297 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V V MHz pF Unit µA 23.0±0.3 V 9.5±0.2 µA a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.7 IB2 (A) –1.4 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 12 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 12 (V CE =4V) 1A 10 Collector Current I C (A) 80 0m A 60 0m A 10 1 –55˚C (Case 25˚C (Cas 125˚C Collector Current I C (A) V B E (sat) 8 400m A Temp) 8 p) 6 e Temp) as e 2 5 Temp ) ˚C (Cas 4 4 (Ca 200mA I B =100mA 2 12 5˚ V C E (sat) 0 0.02 0.05 0.1 0.5 1 5 –5 5˚ C 2 0 0 1 2 3 4 10 0 0 0.2 0.4 0.6 0.8 –55˚C C 25˚C 125 (C 1.0 (Case ˚C Temp e Te se Te (Case mp) Tem mp) 6 ) Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 8 θ j - a (˚ C/W) h FE – I C Characteristics (Typical) t on• t s t g • t f ( µ s) 5 t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics 2 125˚C DC Cur rent Gain h F E Transient Thermal Resistance t s tg V C C 200V I C :I B1 :–I B 2 =10:1:2 1 0.5 t on 25˚C –30˚C 1 10 Swi tchi ng T im e 0.5 tf 0.1 0.5 1 Collector Current I C (A) 5 10 5 0.02 0.05 0.1 0.5 1 5 10 12 0.1 1 10 Time t(ms) 100 3.0 1.2 1000 Collector Current I C (A) Safe Operating Area (Single Pulse) 30 10 0µ s Reverse Bias Safe Operating Area 30 80 P c – T a Derating 10 Co lle ctor Cu rre nt I C ( A) Collector Curr ent I C (A) 5 10 5 M aximum Power Dissipa ti on P C (W) 60 W ith In fin ite he 40 at si nk 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% Without Heatsink Natural Cooling 20 0.1 5 10 50 100 500 Collector-Emitter Voltage V C E (V) 0.1 5 10 50 100 500 3.5 0 Without Heatsink 0 50 100 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 95 .


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