AM4890N

Analog Power AM4890N Dual N-Channel 150-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters PRODUCT SUMMARY rDS(on) (Ω) 0.7 @ VGS = 10V 1.2 @ VGS = 5.5V VDS (V) 150 ID(A) 1.4 1.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 TA=25°C 1.4 ID Continuous Drain Current a TA=70°C 1.1 b IDM Pulsed Drain Current 10 a I 2.6 Continuous Source Current (Diode Conduction) S T =25°C 2.1 A PD Power Dissipation a TA=70°C 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4890N_1A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM4890N Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output C...