AM4934N

Analog Power Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AM4934N PRODUCT SUMMARY rDS(on) m(Ω) FET# 19 @ VGS = 4.5V 1 15 @ VGS = 10V 23 @ VGS = 4.5V 2 15 @ VGS = 10V ID (A) 8.4 9.5 7.7 9.5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol FET#1 FET#1 Drain-Source Voltage 30 30 VDS VGS Gate-Source Voltage 20 20 www.DataSheet.co.kr o Units V Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C a o o o o ID IDM IS PD TJ, Tstg 9.5 7.7 40 4.5 2.1 1.3 -55 to 150 9.5 7.7 40 4.5 2.1 1.3 o A A W C Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RθJA Maximum 62.5 110 Units o o t <= 10 sec Steady-State C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4934_A...