AM50N08-14D

Analog Power AM50N08-14D N-Channel 80-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 13 @ VGS = 4.5V VDS (V) 80 ID(A) 55 51 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 TA=25°C ID 55 Continuous Drain Current a IDM Pulsed Drain Current b 200 IS 55 Continuous Source Current (Diode Conduction) a a T =25°C P 50 Power Dissipation A D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 40 RθJC 3 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM50N08-14D_1A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) ...