AM5350N

Analog Power AM5350N N-Channel 150-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Small Footprint DFN3x2-8L package Typical Applications: Telecom DC/DC converters White LED boost converters Industrial DC/DC conversion Automotive Entertainment and GPS DC/DC conversion PRODUCT SUMMARY rDS(on) (mΩ) 700 @ VGS = 10V 1200 @ VGS = 4.5V VDS (V) 150 ID(A) 1.3 1 DFN3x2-8L EP D D D D G S S S ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 TA=25°C 1.3 ID Continuous Drain Current a TA=70°C 1.1 b IDM Pulsed Drain Current ±10 a I 3 Continuous Source Current (Diode Conduction) S T =25°C 2.5 A PD Power Dissipation a TA=70°C 1.6 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 50 RθJA 90 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM5350N Datasheet pdf - http://www.DataSheet4U.net/ Analog Power Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charg...