AM5480N

Analog Power N-Channel 80-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. AM5480N PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 82 @ VGS = 10V 80 115 @ VGS = 4.5V DFN2x3-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D G ID (A) ±5.4 ±4.6 D Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN2x3-8PP saves board space Fast switching speed High performance trench technology S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS 80 V ±20 Gate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM ±5.4 ±4.4 ±25 2 3.5 2 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RθJA t <= 10 sec Steady State Maximum 35 81 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS...