AM5521C

Analog Power N & P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN2X3 saves board space Fast switching speed High performance trench technology S1 G1 S2 G2 1 2 3 4 AM5521C PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 20 -20 DFN2x3 Top View 8 7 6 5 D1 D1 D2 D2 ID (A) 5 4.3 -4.7 -4.1 S2 G2 0.058 @ VGS = 4.5V 0.077 @ VGS = 2.5V 0.064 @ VGS = -4.5V 0.085 @ VGS = -2.5V D1 G1 D2 S1 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 20 -20 V VGS Gate-Source Voltage ±8 ±8 www.DataSheet.co.kr Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM 5 4.1 8 4.5 2.1 1.3 -4.7 -3.9 -8 -4.5 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a o o IS PD TJ, Tstg TA=25 C TA=70 C Operating Junction and Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t <= 10 sec Steady State RθJA Maximum 62.5 80 Units o o C/W C/W Notes a. Surface Mounte...