AM5931P

Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe CF1206-8 saves board space Fast switching speed High performance trench technology AM5931P PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.084 @ VGS = -10V -30 0.130 @ VGS = -4.5V CF1206-8 Top View S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G1 D1 P-Channel MOSFET ID (A) -3.1 -2.5 S1 G2 S2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage -30 V ±20 Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current b a a www.DataSheet.co.kr o TA=25 C TA=70 C o o ID IDM IS -3.1 -2.5 -10 ±1.6 1.15 0.7 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RthJA Typ 93 130 Max 110 150 o t <= 10 sec Steady State C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperat...