AM6968NE

Analog Power AM6968NE Dual N-Channel 20-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 26 @ VGS = 4.5V 35 @ VGS = 2.5V 46 @ VGS = 1.8V ID(A) 6.8 5.8 4.7 ABSOLUTE MAXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a www.DataSheet.co.kr Symbol VDS VGS TA=25° C TA=70° C ID IDM IS TA=25° C TA=70° C PD TJ, Tstg Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range Limit 20 ±8 6.8 5.5 30 2.2 1.5 1 -55 to 150 Units V A A W ° C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t <= 10 sec Steady State Symbol RθJA Maximum 83 120 Units ° C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM6968NE_1A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time In...