2SC4301

2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4301 900 800 7 7(Pulse14) 3.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) 2SC4301 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 105typ V V MHz pF Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA V 23.0±0.3 9.5±0.2 µA a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 83 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.45 IB2 (A) –1.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 1A 700m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 7 (V CE =4V) 6 500mA 1 –55˚C ) (Case Temp ase Tem p) V B E (sat) Collector Current I C (A) 6 Collector Current I C (A) mp) 4 300 mA 25˚C (C 4 Temp ) (Cas ...