AM7331PE

Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology AM7331PE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 14 @ VGS = -10V -30 26 @ VGS = -4.5V DFN3x3-8PP Top View ID (A) -13.4 -11.1 S S S S G 1 2 3 4 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Param eter Sym bol Maxim um Units VDS Drain-Source Voltage -30 V ±20 G ate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -13.4 -11.0 ±50 -2.1 3.5 2.0 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 150 C T H ERMA L RE SIST A NC E RA T ING S P aram eter M axim umJunction-to-Am bient a Sym bol RθJA t <= 10 sec Steady State Maxim um U nits o 35 C/W 81 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1...