AM7338N

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology AM7338N PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 6.9 @ VGS = 10V 30 9.8 @ VGS = 4.5V DFN3x3-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D ID (A) 19 16 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V ±20 Gate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM ±19 ±16 ±40 2 3.5 2 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol t <= 5 sec t <= 5 sec RθJC RθJA Maximum 25 50 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publica...