MOSFET
Analog Power N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology
AM7360N
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 22 @ VGS = 10V 60 26 @ VGS = 4.5V
DFN3x3-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D
ID (A) 11 10
D
G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V ±20 Gate-Source Voltage VGS
www.DataSheet.co.kr
o
Continuous Drain Current Pulsed Drain Current
b
a
TA=25 C TA=70 C
o
o
ID IDM
±11 ±8 ±75 16 3.5 2 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
a
IS TA=25 C TA=70 C
o o
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Case a Maximum Junction-to-Ambient
a
Symbol
t <= 5 sec t <= 5 sec RθJC RθJA
Maximum 25
50
Units
o o
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
Publicati...
Similar Datasheet