AM7411P

Analog Power AM7411P P-Channel 100-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 229 @ VGS = -10V 248 @ VGS = -4.5V VDS (V) -100 ID(A) -3.8 -3.7 DFN5x6-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 TA=25°C -3.8 ID Continuous Drain Current a TA=70°C -3.1 IDM Pulsed Drain Current b -20 a I -6 Continuous Source Current (Diode Conduction) S T =25°C 5 A PD Power Dissipation a TA=70°C 3.2 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 25 RθJA 65 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM7411P_1A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance O...