MOSFET
Analog Power N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8PP saves board space Fast switching speed High performance trench technology
AM7442N
PRO DUCT SUM M A RY V ) rDS(on) m (Ω ) DS (V 9 @V G S = 10V 40 12 @ V G S = 4.5V
SOIC-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D
ID (A ) 20 17
D
G S N-Channel MOSFET
ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Param eter Sym bol Lim it Units VDS Drain-Source Voltage 40 V ±20 G ate-Source Voltage VGS
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o
Continuous Drain Current Pulsed Drain Current
b
a
TA=25 C TA=70 C
o
o
ID IDM
±20 ±16 ±50 2.3 5.0 3.2 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
a
IS TA=25 C TA=70 C
o o
PD
Operating Junction and Storage Tem perature Range
TJ, Tstg -55 to 150
C
T H E RMA L RE SIST A NC E RA T ING S Param eter
M axim um Junction-to-Am bient
a
Sym bol
RθJA
t <= 10 sec Steady State
Maxim u m U n its o 25 C/W
65
o
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
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