AM90N03-04D

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AM90N03-04D PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 4.5 @ VGS = 10V 30 5.5 @ VGS = 4.5V ID (A) 87 78 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage 30 V ±20 Gate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o TC =25 C ID 87 71 30 50 IDM a o A A W o Continuous Source Current (Diode Conduction) IS TC =25 C P D Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.0 Units o o RθJA RθJC C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM90N03-04_A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM90N03-04D SPECIFICATIONS (TA = ...