AM90N06-10PCFM

Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220 saves board space Fast switching speed High performance trench technology AM90N06-10PCFM PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 9.9 @ VGS = 10V 60 13 @ VGS = 4.5V TO-220CFM ID (A) 90 a D1 G1 S1 N-Channel MOSFET ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Param eter Sym bol Lim it Units VDS Drain-Source Voltage 60 V ±20 G ate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o TC=25 C ID 90 240 90 300 IDM a o A A W o Continuous Source Current (Diode Conduction) IS TC=25 C PD Operating Junction and Storage Tem perature Range TJ, Tstg -55 to 175 C T H E RMA L RESIST A NC E RA TING S Param eter Sym bol M axim umJunction-to-Am bient M axim umJunction-to-Case a Maxim u m U nits 62.5 0.5 o o RθJA RθJC C/W C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM90N06-10PCFM_A Datasheet pdf - http://www.DataSheet4U.net/ ...