AM9435P

Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AM9435P PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 49 @ VGS = -10V -30 75 @ VGS = -4.5V ID (A) -5.7 -5.0 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parame ter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM ±6.5 ±5.2 ±30 -1.6 3.1 2.0 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol t <= 5 sec t <= 10 sec RθJC RθJA Maximum 25 40 Units o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM9435_G Datasheet pdf - http://www.DataSheet4U.n...