AMCC924NE

Analog Power Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN 3x3 saves board space Fast switching speed High performance trench technology AMCC924NE PRODUCT SUMMARY VDS (V) rDS (on) (OHM) 0.012 @ VGS = 4.5 V 20 0.014 @ VGS = 2.5V DFN 3x3 Top View S1 G1 S2 G2 1 2 3 4 8 7 6 5 D D D D S1 N-Channel MOSFET G1 D ID (A) 9.2 8.5 D G2 S2 N-Channel MO SFET ESD Protected 2000V ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS 20 Drain-Source Voltage V VGS Gate-Source Voltage ±8 www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM 9.2 7.5 ±40 1.5 1.5 1.0 -55 to 150 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C TJ, Tstg o o PD Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RthJA Typ 72 100 Max 83 120 o t <= 10 sec Steady State C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junc...