SiC Schottky Barrier Diode
SCS108AG
zApplications Switching power supply zDimensions (Unit : mm) zStructure
zFeatures 1...
SiC
Schottky Barrier Diode
SCS108AG
zApplications Switching power supply zDimensions (Unit : mm) zStructure
zFeatures 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible
zConstruction Silicon carbide epitaxial planer type
ROHM : O-220AC 2L
zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current(*1) Forward current surge peak (60Hz 1cyc) (*2) Junction temperature Storage temperature (*1)Tc=120°C max (*2)PW=8.3ms sinusoidal
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Symbol VRM VR IF IFSM Tj Tstg
Limits 600 600 8 29 150 −55 to +150
Unit V V A A °C °C
zElectrical characteristics (Ta=25°C) Parameter DC blocking voltage Forward voltage Reverse current Total capacitance Total capacitive charge Switching time Thermal resistance
Symbol VDC VF IR C Qc tc Rth(j-c)
Min. 600 -
Typ. 1.5 1.6 345 38 15 15 -
Max. 1.7 160 2.0
Unit V V µA pF pF nC ns °C/W IR=0.16mA IF=8A VR=600V
Conditions
VR=1V,f=1MHz VR=600V,f=1MHz VR=400V,di/dt=300A/µs VR=400V,di/dt=300A/µs junction to case
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1/3
2011.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
SCS108AG
Data Sheet
Fig.1 VF-IF Characteristics 100 pulsed 12 pulsed
Fig.2 VF-IF Characteristics
10 FORWARD CURRENT: IF(A) Ta= 125°C 1 Ta= 75°C Ta= 25°C 0.1 Ta=-25°C FORWARD CURRENT: IF(A) 8
4 Ta= 125°C Ta= 75°C Ta= 25°C Ta=-25°C 1 1.5 2 2.5
0.01
0.001 0 0.5 1 1.5 2 2.5 FORWARD VOLTAGE : VF (V)
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