1.5V Drive Pch+Pch MOSFET
TT8J1
zStructure Silicon P-channel MOSFET zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
zFeat...
1.5V Drive Pch+Pch MOSFET
TT8J1
zStructure Silicon P-channel MOSFET zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
zFeatures 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V)
(1)
(2)
(3)
(4)
Abbreviated symbol : J01
zApplications Switching
Each lead has same dimensions
zPackaging specifications
Package Type TT8J1 Code Basic ordering unit (pieces) Taping TR 3000
zInner circuit
(8) (7) (6) (5)
∗2
∗2
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗1
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∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1
∗2
PD Tch Tstg
Limits −12 ±10 ±2.5 ±10 −0.8 −10 1.25 1.0 150 −55 to +150
Unit V V A A A A W / TOTAL W / ELEMENT °C °C
zThermal resistance
Parameter Channel to ambient
∗ Mounted on a ceramic board
Symbol
∗
Limits 100 125
Unit °C / W / TOTAL °C / W / ELEMENT
Rth(ch-a)
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1/5
2009.01 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
TT8J1
zElectrical characteristics (Ta=25°C)
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