TT8J13

Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J13  Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive(1.5V drive). (1) (2) (3) (4) Abbreviated symbol : J13  Application Switching Inner circuit (8) (7) (6) (5)  Packaging specifications Type TT8J13 Package Code Basic ordering unit (pieces) Taping TCR 3000  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (4)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Symbol VDSS VGSS Limits 12 0 to 8 2.5 www.DataSheet.co.kr Unit V V A A A A W / TOTAL W / ELEMENT C C Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 5 0.8 5 1.25 1 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient * Mounted on a ceramic board. Symbol Rth (ch-a) * Limits 100 125 Unit ˚C / W /TOTAL ˚C / W /ELEMENT www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ TT8J13  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero g...