TT8K2

2.5V Drive Nch MOSFET TT8K2 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TSST8 (8) (7) (6) (5) zFeatures 1) Low on-state resistance with fast switching. 2) Low voltage drive (2.5V). (1) (2) (3) (4) Abbreviated symbol : K02 Each lead has same dimensions zApplication Switching zInner circuit (8) (7) (6) (5) zPackaging specifications Package Type TT8K2 Code Basic ordering unit (pieces) Taping TR 3000 www.DataSheet.co.kr ∗2 ∗2 ∗1 ∗1 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain−source voltage Gate−source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg ∗1 ∗2 ∗1 Limits 30 ±12 ±2.5 ±10 0.8 10 1.25 1.0 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board Symbol Rth (ch-a) ∗ Limits 100 125 Unit °C / W / TOTAL °C / W / ELEMENT www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.04 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ TT8K2 zElectrical characteristics (Ta=25°C) Symbol Parameter Gate-source l...