2SC4390

Ordering number : EN2958B 2SC4390 SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a ceramic board (250mm2✕0.8mm) Parameter Collector Cutoff Current Emitter Cutoff Current Marking : CJ Symbol ICBO IEBO Conditions VCB=15V, IE=0A VEB=10V, IC=0A min Ratings 20 10 15 2 4 0.4 500 1.3 150 --55 to +150 Unit V V V A A A mW W °C °C Ratings typ max Unit 0.1 μA 0.1 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control devic...