2SC4394

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 2SC4394 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high cain. · NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 80 40 100 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit 5 7 ¾ GHz ¾ 16.5 7.5 11 ¾ ¾ dB ¾1¾ dB ¾ 1.1 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note) ¾ ¾ 30 ¾ ¾ ¾ 1 mA ¾ 1 mA ¾ 250 1.0 ¾ pF 0.7 1.15 pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 Marking 2SC4394 2 2003-03-...