Document
S T U/D2030P LS
S amHop Microelectronics C orp.
Aug 20 2005
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m W ) Max
ID
-20A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
32 @ V G S = -10V 55 @ V G S = -4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TU S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
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P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating Junction and S torage Temperature R ange
S ymbol V DS V GS ID IDM IS PD T J , T S TG
Limit -30 20 -20 -60 -20 50 -55 to 175
Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
Datasheet pdf - http://www.DataSheet4U.net/
R JC R JA
3 50
C /W C /W
S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
b
Condition
V GS = 0V, ID = -250uA V DS = -20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID = -20A V GS =-4.5V, ID = -10A V DS = -10V, V GS = -10V V DS = -10V, ID= -10A
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Min Typ C Max Unit
-25 -1 V uA 100 nA -1 -1.7 27 41 -30 14 950 250 170 2.6 10 22 68.8 38.5 18.5 9.6 1.6 5.8 -3 32 55 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =-15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = -15V ID = -1 A V GS = -10V R GE N = 6 ohm V DS =-15V, ID = -20A V GS =-10V
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
ns ns ns ns nC nC nC nC
Datasheet pdf - http://www.DataSheet4U.net/
2
S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is = -10A
Min Typ Max Unit
-0.9 -1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
25 V G S =-4V 20
-I D , Drain C urrent(A)
20
V G S =-5V V G S =-8V V G S =-10V
15
-I D , Drain C urrent (A)
V G S =-4.5V
15
10 T j=125 C 5 25 C 0
10 5 0
V G S =-3V
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-55 C
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
-V DS , Drain-to-S our.