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2030PLS Dataheets PDF



Part Number 2030PLS
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description STD2030PLS
Datasheet 2030PLS Datasheet2030PLS Datasheet (PDF)

S T U/D2030P LS S amHop Microelectronics C orp. Aug 20 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max ID -20A R DS (ON) S uper high dense cell design for low R DS (ON ). 32 @ V G S = -10V 55 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TU S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) www.DataSheet.

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S T U/D2030P LS S amHop Microelectronics C orp. Aug 20 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max ID -20A R DS (ON) S uper high dense cell design for low R DS (ON ). 32 @ V G S = -10V 55 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TU S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) www.DataSheet.co.kr P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -30 20 -20 -60 -20 50 -55 to 175 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 Datasheet pdf - http://www.DataSheet4U.net/ R JC R JA 3 50 C /W C /W S T U/D2030P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = -20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID = -20A V GS =-4.5V, ID = -10A V DS = -10V, V GS = -10V V DS = -10V, ID= -10A www.DataSheet.co.kr Min Typ C Max Unit -25 -1 V uA 100 nA -1 -1.7 27 41 -30 14 950 250 170 2.6 10 22 68.8 38.5 18.5 9.6 1.6 5.8 -3 32 55 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =-15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = -15V ID = -1 A V GS = -10V R GE N = 6 ohm V DS =-15V, ID = -20A V GS =-10V ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd ns ns ns ns nC nC nC nC Datasheet pdf - http://www.DataSheet4U.net/ 2 S T U/D2030P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is = -10A Min Typ Max Unit -0.9 -1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 25 V G S =-4V 20 -I D , Drain C urrent(A) 20 V G S =-5V V G S =-8V V G S =-10V 15 -I D , Drain C urrent (A) V G S =-4.5V 15 10 T j=125 C 5 25 C 0 10 5 0 V G S =-3V www.DataSheet.co.kr -55 C 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 -V DS , Drain-to-S our.


NRB-XY 2030PLS D1266


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