2030PLS

S T U/D2030P LS S amHop Microelectronics C orp. Aug 20 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max ID -20A R DS (ON) S uper high dense cell design for low R DS (ON ). 32 @ V G S = -10V 55 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TU S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) www.DataSheet.co.kr P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -30 20 -20 -60 -20 50 -55 to 175 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 Datasheet pdf - http://www.DataSheet4U.net/ R JC R JA 3 50 C /W C /W S T U/D2030P LS E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = -20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID = -20A V GS =-4.5V, ID = -10A V DS = -10V, V GS = -10V V DS = -10V, ID= -10A www.DataSheet.co.kr Min Typ C Max Unit -25 -1 V uA 100 nA -1 -1.7 27 41 -30 14 950 250 170 ...