Document
Transistors
2SC4410
Silicon NPN epitaxial planar type
For UHF amplification
Unit: mm
(0.425)
0.3+–00..01
0.15+–00..0150
■ Features 3
• Allowing the small current and low voltage operation
1.25±0.10 2.1±0.1 5˚
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
2
packing
(0.65) (0.65)
1.3±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.0±0.2
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
10
0.2±0.1
V
c e. d ty Collector-emitter voltage (Base open) VCEO
7
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
0 to 0.1 0.9±0.1 0.9–+00..12
V
a e cle con Collector current
IC
10
mA
lifecy , dis Collector power dissipation
PC
50
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
10˚
EIAJ: SC-70
1: Base 2: Emitter 3: Collector SMini3-G1 Package
Marking Symbol: 2X
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1.5 V, IC = 0
M is con inten Forward current transfer ratio
hFE VCE = 1 V, IC = 1 mA
/Dis ma Transition frequency
fT
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
ce pe, Collector output capacitance
D nan e ty (Common base, input open circuited)
Cob VCB = 1 V, IE = 0, f = 1 MHz
1
µA
1
µA
50
200
4
GHz
0.4
pF
inte anc Foward transfer gain Ma inten Maximum unilateral power gain d ma Noise figure
S21e2 GUM NF
VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz
6.0
dB
15
dB
3.5
dB
(plane Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure
Publication date: March 2004
SJC00155BED
1
2SC4410
Collector power dissipation PC (mW)
Collector-emitter saturation voltage VCE(sat) (V)
PC Ta
80
IC VCE
6 Ta = 25°C
IC VBE
60 VCE = 1 V
Collector current IC (mA)
Collector current IC (mA)
IB = 50 µA 5
45 µA
50
60
40 µA
35 µA
4
40
30 µA
25°C
40
25 µA
Ta = 75°C −25°C
3
30
20 µA
2
15 µA
20
20
10 µA
0
0
40
80
120
160
Ambient temperature Ta (°C)
1
5 µA
0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector-emitter voltage VCE (V)
10
0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V)
ce/ 100 an ed 10 n u 1 te tin 0.1 in n 0.01 a o 0.1 M isc 1.2 D 1.0
0.8
0.6
pe) VCE(sat) IC e. d ty IC / IB = 10
Transition frequency fT (GHz)
Forward current transfer ratio hFE
Productelidfetcyypceled,sdtaisgcontinue Ta = 75°C ur tinu 25°C fo on −25°C
ludes foell,opwliannged disc 1
10
100
d inc e typ Collector current IC (mA)
hFE IC
240 VCE = 1 V
200
160
Ta = 75°C 120
25°C 80
−25°C
40
0
0.1
1
10
100
Collector current IC (mA)
fT IC
12
VCE = 1 V
f = 800 MHz
Ta = 25°C 10
8
6
4
2
0
0.1
1
10
100
Collector current IC (mA)
/Discontimnuaeintenanc Cob VCB ce pe, IE = 0 an ty f = 1 MHz (planeMd aminatienntenance Ta = 25°C
GUM IC
24
VCE = 1 V
f = 800 MHz
Ta = 25°C 20
16
12
NF IC
6
VCE = 1 V
(Rg = 50 Ω)
5
f = 800 MHz Ta = 25°C
4
3
0.4
8
2
Noise figure NF (dB)
Maximum unilateral power gain GUM (dB)
0.2
4
1
0
0.1
1
10
100
Collector-base voltage VCB (V)
0
0.1
1
10
100
Collector current IC (mA)
0
0.1
1
10
100
Collector current IC (mA)
(pF)
Cob
Collector output capacitance (Common base, input open circuited)
2
SJC00155BED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information o.