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2SC4410 Dataheets PDF



Part Number 2SC4410
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC4410 Datasheet2SC4410 Datasheet (PDF)

Transistors 2SC4410 Silicon NPN epitaxial planar type For UHF amplification Unit: mm (0.425) 0.3+–00..01 0.15+–00..0150 ■ Features 3 • Allowing the small current and low voltage operation 1.25±0.10 2.1±0.1 5˚ • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e p.

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Transistors 2SC4410 Silicon NPN epitaxial planar type For UHF amplification Unit: mm (0.425) 0.3+–00..01 0.15+–00..0150 ■ Features 3 • Allowing the small current and low voltage operation 1.25±0.10 2.1±0.1 5˚ • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 10 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 7 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2 0 to 0.1 0.9±0.1 0.9–+00..12 V a e cle con Collector current IC 10 mA lifecy , dis Collector power dissipation PC 50 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 10˚ EIAJ: SC-70 1: Base 2: Emitter 3: Collector SMini3-G1 Package Marking Symbol: 2X in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1.5 V, IC = 0 M is con inten Forward current transfer ratio hFE VCE = 1 V, IC = 1 mA /Dis ma Transition frequency fT VCE = 1 V, IC = 1 mA, f = 0.8 GHz ce pe, Collector output capacitance D nan e ty (Common base, input open circuited) Cob VCB = 1 V, IE = 0, f = 1 MHz 1 µA 1 µA 50 200  4 GHz 0.4 pF inte anc Foward transfer gain Ma inten Maximum unilateral power gain d ma Noise figure S21e2 GUM NF VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz 6.0 dB 15 dB 3.5 dB (plane Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure Publication date: March 2004 SJC00155BED 1 2SC4410 Collector power dissipation PC (mW) Collector-emitter saturation voltage VCE(sat) (V) PC  Ta 80 IC  VCE 6 Ta = 25°C IC  VBE 60 VCE = 1 V Collector current IC (mA) Collector current IC (mA) IB = 50 µA 5 45 µA 50 60 40 µA 35 µA 4 40 30 µA 25°C 40 25 µA Ta = 75°C −25°C 3 30 20 µA 2 15 µA 20 20 10 µA 0 0 40 80 120 160 Ambient temperature Ta (°C) 1 5 µA 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector-emitter voltage VCE (V) 10 0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) ce/ 100 an ed 10 n u 1 te tin 0.1 in n 0.01 a o 0.1 M isc 1.2 D 1.0 0.8 0.6 pe) VCE(sat)  IC e. d ty IC / IB = 10 Transition frequency fT (GHz) Forward current transfer ratio hFE Productelidfetcyypceled,sdtaisgcontinue Ta = 75°C ur tinu 25°C fo on −25°C ludes foell,opwliannged disc 1 10 100 d inc e typ Collector current IC (mA) hFE  IC 240 VCE = 1 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 0.1 1 10 100 Collector current IC (mA) fT  IC 12 VCE = 1 V f = 800 MHz Ta = 25°C 10 8 6 4 2 0 0.1 1 10 100 Collector current IC (mA) /Discontimnuaeintenanc Cob  VCB ce pe, IE = 0 an ty f = 1 MHz (planeMd aminatienntenance Ta = 25°C GUM  IC 24 VCE = 1 V f = 800 MHz Ta = 25°C 20 16 12 NF  IC 6 VCE = 1 V (Rg = 50 Ω) 5 f = 800 MHz Ta = 25°C 4 3 0.4 8 2 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.2 4 1 0 0.1 1 10 100 Collector-base voltage VCB (V) 0 0.1 1 10 100 Collector current IC (mA) 0 0.1 1 10 100 Collector current IC (mA) (pF) Cob Collector output capacitance (Common base, input open circuited) 2 SJC00155BED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information o.


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