2SC4416

2SC4416 Silicon NPN Epitaxial Application UHF Frequency conversion, Wide band amplifier Outline MPAK 3 1 2 1. Base 2. Emitter 3. Collector 2SC4416 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain I EBO VCE(sat) hFE Cob fT CG Min 25 — — — — 50 — 3.0 15 Typ — — — — — — 0.85 3.8 19 Max — 0.1 10 0.3 0.3 180 1.3 — — pF GHz dB Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCB = 13 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 0.8 mA, f in = 900 MHz, f OSC = 930 MHz (–5dBm), f out = 30 MHz Noise figure Note: Marking is “XB–”. NF — 8 1.2 dB 2 2SC4416 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 200 VCE = 5 V 160 100 120 80 50 40 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current ...