Document
Ordering number : EN2851A
2SC4428
SANYO Semiconductors
DATA SHEET
2SC4428
NPN Triple Diffused Planar Silicon Transistor
800V / 6A Switching Regulator Applications
Features
• High breakdown voltage, high reliability. • High-speed switching (tr : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Conditions
PW≤300µs, duty cycle≤10% Tc=25°C
Ratings 1100 800 7 6 20 3 3 55 150
--55 to +150
Unit V V V A A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings min typ max
Unit
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
ICBO IEBO hFE1 hFE2
VCB=800V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.4A VCE=5V, IC=2A
10 µA 10 µA 10* 40* 8 Continued on next page.
* : The hFE1 of the 2SC4428 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
K
L
M
hFE
10 to 20
15 to 30
20 to 40
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 42506KB MS IM TB-00002147 / 13004TN (KT) / D1898HA (KT) / N248MO, TS No.2851-1/4
2SC4428
Continued from preceding page.
Parameter
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time Storage Time Fall Time
Symbol
Conditions
fT Cob
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCEX(sus)
ton tstg
tf
VCE=10V, IC=0.4A VCB=10V, f=1MHz IC=3A, IB=0.6A IC=3A, IB=0.6A IC=1mA, IE=0A IC=5mA, RBE=∞ IE=1mA, IC=0A IC=3A, IB1=0.6A, IB2=--0.6A, L=1mH, Clamped VCC=400V, IB1=0.8A, IB2=--1.6A, IC=4A, RL=100Ω VCC=400V, IB1=0.8A, IB2=--1.6A, IC=4A, RL=100Ω VCC=400V, IB1=0.8A, IB2=--1.6A, IC=.