DatasheetsPDF.com

2SC4428 Dataheets PDF



Part Number 2SC4428
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Transistor
Datasheet 2SC4428 Datasheet2SC4428 Datasheet (PDF)

Ordering number : EN2851A 2SC4428 SANYO Semiconductors DATA SHEET 2SC4428 NPN Triple Diffused Planar Silicon Transistor 800V / 6A Switching Regulator Applications Features • High breakdown voltage, high reliability. • High-speed switching (tr : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage C.

  2SC4428   2SC4428



Document
Ordering number : EN2851A 2SC4428 SANYO Semiconductors DATA SHEET 2SC4428 NPN Triple Diffused Planar Silicon Transistor 800V / 6A Switching Regulator Applications Features • High breakdown voltage, high reliability. • High-speed switching (tr : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25°C Ratings 1100 800 7 6 20 3 3 55 150 --55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 VCB=800V, IE=0A VEB=5V, IC=0A VCE=5V, IC=0.4A VCE=5V, IC=2A 10 µA 10 µA 10* 40* 8 Continued on next page. * : The hFE1 of the 2SC4428 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. Rank K L M hFE 10 to 20 15 to 30 20 to 40 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 42506KB MS IM TB-00002147 / 13004TN (KT) / D1898HA (KT) / N248MO, TS No.2851-1/4 2SC4428 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time Storage Time Fall Time Symbol Conditions fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCEX(sus) ton tstg tf VCE=10V, IC=0.4A VCB=10V, f=1MHz IC=3A, IB=0.6A IC=3A, IB=0.6A IC=1mA, IE=0A IC=5mA, RBE=∞ IE=1mA, IC=0A IC=3A, IB1=0.6A, IB2=--0.6A, L=1mH, Clamped VCC=400V, IB1=0.8A, IB2=--1.6A, IC=4A, RL=100Ω VCC=400V, IB1=0.8A, IB2=--1.6A, IC=4A, RL=100Ω VCC=400V, IB1=0.8A, IB2=--1.6A, IC=.


2SC4427 2SC4428 2SC4429


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)