Document
High Voltage IGBT
Preliminary Data Sheet
IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 40 20 80 ICM = 80 @ 0.8 VCES 190 -55 ... +150
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V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E
W °C °C °C °C °C G = Gate, E = Emitter,
150 300 260
C = Collector, TAB = Collector
-55 ... +150
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C 5 50 ± 100 TJ = 125°C 2.9 2.8 3.4 3.8 V V µA nA V V
Features z High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers z International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD z Low switching losses, low V(sat) z MOS Gate turn-on - drive simplicity Advantages
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
z z z
VCE = VCES VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V
High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole)
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DS98986D(05/03)
Datasheet pdf - http://www.DataSheet4U.net/
IXGH IXGT
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 18 1700 VCE = 25 V, VGE = 0 V, f = 1 MHz 95 35 72 IC = 20A, VGE = 15 V, VCE = 0.5 VCES 12 27 25 Inductive load, TJ = 25°C IC = 20 A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω 15 150 160 2.1 25 18 Inductive load, TJ = 125°C IC = 20A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω 0.9 270 360 3.5
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20N120B 20N120B
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 20A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
S pF pF pF nC nC nC ns ns 280 320 ns ns
Dim.
e ∅P
3.5 mJ ns ns mJ ns ns mJ 0.65 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Min Recommended Footprint
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 .