DatasheetsPDF.com

IXGT20N120B Dataheets PDF



Part Number IXGT20N120B
Manufacturers IXYS
Logo IXYS
Description High Voltage IGBT
Datasheet IXGT20N120B DatasheetIXGT20N120B Datasheet (PDF)

High Voltage IGBT Preliminary Data Sheet IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 40 20 80 ICM = 80 @ 0.8 VCES 190 -55 ... +150 www.DataSheet.co.kr V.

  IXGT20N120B   IXGT20N120B



Document
High Voltage IGBT Preliminary Data Sheet IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 40 20 80 ICM = 80 @ 0.8 VCES 190 -55 ... +150 www.DataSheet.co.kr V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E W °C °C °C °C °C G = Gate, E = Emitter, 150 300 260 C = Collector, TAB = Collector -55 ... +150 Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C 5 50 ± 100 TJ = 125°C 2.9 2.8 3.4 3.8 V V µA nA V V Features z High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers z International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD z Low switching losses, low V(sat) z MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE z z z VCE = VCES VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2003 IXYS All rights reserved DS98986D(05/03) Datasheet pdf - http://www.DataSheet4U.net/ IXGH IXGT Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 18 1700 VCE = 25 V, VGE = 0 V, f = 1 MHz 95 35 72 IC = 20A, VGE = 15 V, VCE = 0.5 VCES 12 27 25 Inductive load, TJ = 25°C IC = 20 A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω 15 150 160 2.1 25 18 Inductive load, TJ = 125°C IC = 20A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω 0.9 270 360 3.5 www.DataSheet.co.kr 20N120B 20N120B TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 20A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % S pF pF pF nC nC nC ns ns 280 320 ns ns Dim. e ∅P 3.5 mJ ns ns mJ ns ns mJ 0.65 K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 K/W Min Recommended Footprint Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 .


IXGH20N100 IXGT20N120B IXGH20N120B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)