GenX3 1400V IGBTs
Advance Technical Information
GenX3TM 1400V IGBTs w/ Diode
High-Speed PT IGBTs for 20 - 50 kHz Switching
IXGH20N140C3H...
Description
Advance Technical Information
GenX3TM 1400V IGBTs w/ Diode
High-Speed PT IGBTs for 20 - 50 kHz Switching
IXGH20N140C3H1 IXGT20N140C3H1
VCES = IC100 = VCE(sat) ≤ tfi(typ) =
TO-247 (IXGH)
1400V 20A 5.0V 32ns
Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 1400 1400 ±20 ±30 42 20 108 20 400 ICM = 40 VCE ≤ VCES 250
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V V V V A A A A mJ A W °C °C °C °C °C Nm/lb.in. g g
G
C
E
C (Tab)
TO-268 (IXGT) G E
C (Tab)
G = Gate E = Emitter
C = Collector Tab = Collector
-55 ... +150 150 -55 ... +150 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4
Features
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Optimized for Low Switching Losses Square RBSOA High Avalanche Capability Anti-Parallel Ultra Fast Diode International Standard Packages
Advantages
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High Power Density Low Gate Drive Requirement
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C, Note 1 VCE = 0V, VGE = ±20V IC = IC100, VGE = 15V, Note 1 TJ = 125°C VCE = VCES, VGE= 0V
Characteristic Values Min. Typ. Max. 3.0 5.0 100 2.0 ±100 4.0 3.5 5.0 V μA mA nA V V
Applications
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