2SC4449

Ordering number:EN3241 NPN Triple Diffused Planar Silicon Transistor 2SC4449 TV Camera Deflection, High-Voltage Driver Applications Features · High breakdown voltage. · Small reverse transfer capacitance and excellent high frequency characteristic. · Excellent DC current gain. · Adoption of FBET process. Package Dimensions unit:mm 2003B [2SC4449] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 1.3 Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 hFE ratio fT * : The 2SC4449 is classified by 0.1mA hFE as follows : 100 E 200 160 F 320 VCB=200V, IE=0 VEB=4V, IC=0 VCE=6V, IC=0.1mA VCE=6V, IC=1mA hFE1/hFE2 VCE=30V, IC=10mA 0.44 1 : Emitter 2 : Collector 3 : Base SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Ratings 300 300 5 50 100 600 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ 100 100 0.95 70 max 0.1 0.1 320 Unit µA µA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support...